We manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.

GaAs
based products

AlGaAs/GaAs
  • QW edge emitting lasers
  • VCSELs
  • FETs, HEMTs, Schottky diodes
  • varactors
GaAsP/GaAs
  • strained QW edge emitting lasers
InGaAsP/GaAs
  • QW lasers 808nm
InGaAs/AlGaAs/GaAs
  • strained QW lasers
InAs/GaAs
  • QD lasers
AlGaAs/GaAs
  • passive waveguides
Manufactured to specification
InGaAsP/InP
  • strained or matched QW edge emitting lasers and SOAs 1300 - 1600nm
InGaAs/InP
  • QW edge emitting lasers
InGaAsP/InP
  • VCSEL structures
InAlGaAs/InP
  • edge emitting and VCSEL structures
InGaAsP/InP
  • passive devices
InGaAs
  • photodetectors
InAlAs/InGaAs/InP
  • HEMTs
Manufactured to specification

InP
based products

World class R&D expertise

We offer extensive research and development services. Whether you are at the concept stage of your product design, need innovative upgrades to your existing products or seek out-of-the-box solutions our R&D capabilities can help you seize new opportunities, bring your operation to the highest level of performance and add value to your investment. We also provide our clients with technological support in carrying out R&D projects and propose new methods and approaches for producing highly successful epitaxial structures.