We manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.

GaAs
based products

AlGaAs/GaAs
  • QW edge emitting lasers
  • VCSELs
  • FETs, HEMTs, Schottky diodes
  • varactors
GaAsP/GaAs
  • strained QW edge emitting lasers
InGaAsP/GaAs
  • QW lasers 808nm
InGaAs/AlGaAs/GaAs
  • strained QW lasers
InAs/GaAs
  • QD lasers
AlGaAs/GaAs
  • passive waveguides
Manufactured to specification
InGaAsP/InP
  • strained or matched QW edge emitting lasers and SOAs 1300 - 1600nm
InGaAs/InP
  • QW edge emitting lasers
InGaAsP/InP
  • VCSEL structures
InAlGaAs/InP
  • edge emitting and VCSEL structures
InGaAsP/InP
  • passive devices
InGaAs
  • photodetectors
InAlAs/InGaAs/InP
  • HEMTs
Manufactured to specification

InP
based products

World class R&D expertise

We offer extensive research and development services. Whether you are at the concept stage of your product design, need innovative upgrades to your existing products or seek out-of-the-box solutions, our R&D capabilities can help you seize new opportunities. We also provide our clients with technological support in carrying out R&D projects and propose new methods and approaches for producing highly successful epitaxial structures.