We manufacture exceptionally high quality gallium arsenide (GaAs), indium phosphide (InP) related epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, LEDs, transistors, photovoltaic cells and other devices. Our many years of experience with technology and global research, and our direct access to VIGO System’ specialists and advanced equipment, allow us to offer one of the broadest range of III-V semiconductor products.

GaAs
based products

AlGaAs/GaAs
  • QW edge emitting lasers 680 – 870nm
  • VCSELs
  • HEMTs
  • varactors
  • strained QW edge emitting lasers
InGaAsP/GaAs
  • QW lasers 808nm
InGaAs/AlGaAs/GaAs
  • strained QW lasers 800 – 1000nm
InGaAs/GaAs and InAs/GaAs
  • QD lasers
AlGaAs/InGaAs/InAlAs
  • QC lasers
AlGaAs/GaAs
  • passive waveguides
Specific GaAs
  • based structures
InGaAsP/InP
  • strained or matched QW edge emitting lasers and SOAs 1300 - 1600nm
  • VCSEL structures
  • passive devices
InGaAs/InP
  • QW edge emitting lasers 1550nm
InAlGaAs/InP
  • edge emitting and VCSEL structures
InP-based
  • photodetectors
InAlAs/InGaAs/InP
  • HEMTs
Specific InP
  • based structures

InP
based products

III-Sb
based products

GaSb/GaSb
  • undoped layers
InGaSb/GaSb
  • lattice mismatched, type P
InGaAsSb/GaSb
  • lattice matched, type P
GaAsSb/InP
  • layer thickness <0.5 μm, type P

World class R&D expertise

We offer extensive research and development services to help innovative companies meet their challenges and bring innovation to market successfully. Whether you are at the concept stage of your product design or need innovative upgrades to your existing products, our R&D capabilities can help you seize new opportunities, bring your operation to the highest level of performance and add value to your investment.